Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect

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Compositionally Graded Semiconductors and their Device Applicationshas far reaching consequences for devices made of these materials, is that electrons and holes experience different electric forces so the transport properties of the two types of carriers can be independently tuned.

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Direct observation of effective mass filtering in InGaAs/lnP superlatticesgle quantum well samples in the form of .. -. junctions and involved low-temperature photoinduced capacitance and ac conductivity measurements, which easily resolved the 205 Å superlattice period, and deep level transient spectroscopy observations of hole trapping in 60-80 Å quantum wells.

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Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAse of interface dipoles and variations of band-gap discontinuities. The orientation variation of the band-gap discontinuities is found to be a significant fraction (≈.) of the total band-gap discontinuity.

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Internal Photoemission in GaAs/(AlxGa1−x)As Heterostructures internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al.Ga.)As and in the near red region where excitations from the GaAs valence band into the (Al.Ga.)As conduction band are involved. From the measured energies we determine ΔE./ΔE. = 0.8 ± 0.03 for x = 0.2.

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Heterostructure Devices: A Device Physicist Looks at Interfacesdent offset variations, act as major limitations in device design. Suitable measurements on device-type structures can provide accurate values for interface physics parameters, but the most widely used measurements are of limited reliability, with pure . measurement being of least use. Many of the p