Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect

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书目名称Electronic Structure of Semiconductor Heterojunctions影响因子(影响力)




书目名称Electronic Structure of Semiconductor Heterojunctions影响因子(影响力)学科排名




书目名称Electronic Structure of Semiconductor Heterojunctions网络公开度




书目名称Electronic Structure of Semiconductor Heterojunctions网络公开度学科排名




书目名称Electronic Structure of Semiconductor Heterojunctions被引频次




书目名称Electronic Structure of Semiconductor Heterojunctions被引频次学科排名




书目名称Electronic Structure of Semiconductor Heterojunctions年度引用




书目名称Electronic Structure of Semiconductor Heterojunctions年度引用学科排名




书目名称Electronic Structure of Semiconductor Heterojunctions读者反馈




书目名称Electronic Structure of Semiconductor Heterojunctions读者反馈学科排名

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团结

团结

entreat

Schottky barriers: An effective work function modelgold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.

debase

Parabolic quantum wells with the GaAs-Al,Ga,As system = 0.15Δ.. generally assumed for square wells. Experiment and theory show that parabolic wells can lead to parity-allowed Δ. = 2 (“forbidden”) transitions with strengths greater than Of nearby Δ. = 0(“allowed”) transitions.

travail

Growth of Microstructures by Molecular Beam Epitaxyric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures.