Titlebook: Electronic Structure of Metal-Semiconductor Contacts; Winfried Mönch Book 1990 Editorial Jaca Book spa, Milano 1990 AES.Experiment.Halblei

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Fundamental Transition in The Electronic Nature of Solids, which is developed between constituent atoms. For example, the familiar Group-IV semiconductors are totally covalent and exhibit characteristics which are qualitatively different from highly ionic materials, such as the alkali halides. However, many materials of fundamental and practical importance

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Electronic structure of a metal-semiconductor interface,Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dang

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Ionicity and the theory of Schottky barriers,lectronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of state

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Chemical trends in metal-semiconductor barrier heights,nic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate .saturation of the interface parameter .for .= 1. Considering the definition of ., it follows that the true Schottky limit should occur for some number .≈: 2.0-3.0 rather tha

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Transition in Schottky Barrier Formation with Chemical Reactivity,rrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.

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