书目名称 | Electronic Structure of Metal-Semiconductor Contacts | 编辑 | Winfried Mönch | 视频video | | 丛书名称 | Perspectives in Condensed Matter Physics | 图书封面 |  | 描述 | Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm‘s law was called, could not be given at that time. A prerequisite was Wilson‘s quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space- | 出版日期 | Book 1990 | 关键词 | AES; Experiment; Halbleiter; Kupfer; Potential; REM; STEM; development | 版次 | 1 | doi | https://doi.org/10.1007/978-94-009-0657-0 | isbn_softcover | 978-94-010-6780-5 | isbn_ebook | 978-94-009-0657-0Series ISSN 0923-1749 | issn_series | 0923-1749 | copyright | Editorial Jaca Book spa, Milano 1990 |
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