Titlebook: Electronic Structure and Optical Properties of Semiconductors; Marvin L. Cohen,James R. Chelikowsky Textbook 1989Latest edition Springer-V

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Meeting the Climate Change Challengee in the experimental reflectivity and modulated reflectivity for these materials than the corresponding III-V compounds. Typical materials in this group are ZnGeP. and CdSnAs.; these are the chalcopyrite analogs of GaP and InAs respectively.

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Diamond and Zinc-Blende Structure Semiconductors,liches are often trivializing in nature, the comparison here is not. The amount of data for silicon is immense; almost every conceivable probe has been applied to silicon with a concurrent analysis of theoretical predictions. Most of the theoretical results given in this chapter are from [8.1].

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Nataliya Klimova,Oleg Kozyrev,Eduard Babkincompared with calculated density of states curves. The details and methods regarding the use of the measured spectra will be discussed elsewhere in this volume. Here we describe the theoretical calculations of the response functions.

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Yuri N. Toulouevski,Ilyaz Y. Zinurovfunction of x-rays is to probe the valence charge density of a semiconductor. The experimental determination of valence charge densities is difficult but not impossible, and some very good data exist for diamond and zinc-blende semiconductors. Finally, x-rays can be used to monitor temperature effects by studying Debye-Waller factors.

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