Titlebook: Design and Realization of Novel GaAs Based Laser Concepts; Tim David Germann Book 2012 Springer-Verlag Berlin Heidelberg 2012 GaAs-based N

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High-Power Vertical External-Cavity Surface-Emitting Lasers,For the first time, MOVPE grown VECSELs using SMLs and QDs as active media are realized. Results of VECSELs for 950 nm, 1040 nm, and 1210 nm emission wavelengths are presented. QD VECSELs especially benefit from the very broad QD gain spectrum, enabling almost perfect temperature stability during operation.

Substance

Summary and Outlook,Summary and outlook of the doctoral thesis of Tim David Germann showing key achievements and possibilities for future work.

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Design and Realization of Novel GaAs Based Laser Concepts978-3-642-34079-6Series ISSN 2190-5053 Series E-ISSN 2190-5061

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Daniel Fentham,David Parker,Mark Ryan which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.

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Infantry

Methodology III: Empirical Evaluationization challenges encountered for this . 400 layer dual cavity design. Modeling and measurements reveal existing prototype limitations and predict an intrinsic bandwidth potential of 56 GHz for future devices.

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Semiconductor Laser Concepts, which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.