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Titlebook: Design and Realization of Novel GaAs Based Laser Concepts; Tim David Germann Book 2012 Springer-Verlag Berlin Heidelberg 2012 GaAs-based N

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发表于 2025-3-21 19:46:27 | 显示全部楼层 |阅读模式
书目名称Design and Realization of Novel GaAs Based Laser Concepts
编辑Tim David Germann
视频video
概述Demonstrates how ingenious nanostructure design enables tailoring of key properties of semiconductor lasers.Includes detailed analysis of the underlying physics.Represents a big step forward for low-c
丛书名称Springer Theses
图书封面Titlebook: Design and Realization of Novel GaAs Based Laser Concepts;  Tim David Germann Book 2012 Springer-Verlag Berlin Heidelberg 2012 GaAs-based N
描述Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. .This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.
出版日期Book 2012
关键词GaAs-based Nanolaser; High Speed EOM VCSEL; MOCVD QD Growth; MOVPE QD Growth; QD VECSEL; Quantum Dot Lase
版次1
doihttps://doi.org/10.1007/978-3-642-34079-6
isbn_softcover978-3-662-51115-2
isbn_ebook978-3-642-34079-6Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightSpringer-Verlag Berlin Heidelberg 2012
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发表于 2025-3-21 21:08:36 | 显示全部楼层
Mohamed El Amine Bekhouche,Kamel Adi ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.
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Book 2012tion storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. .This thesis demonstrates how key performance characteristics of three com
发表于 2025-3-22 11:18:23 | 显示全部楼层
MOVPE Processes, ratio was found to be crucial for the long-term stability of QD properties during subsequent QD overgrowth and annealing. Results of MOVPE grown material properties used for device fabrication and limits of possible doping levels are outlined.
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Design and Realization of Novel GaAs Based Laser Concepts
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Semiconductor Laser Concepts, which is primarily employed for the infrared spectral range. Due to its versatility and ability to form dielectric mirrors for vertically emitting devices, (.). forms the basis for a wide range of applications in the near infrared spectrum, and is well-established for industrial mass production.
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Edge-Emitting Quantum Dot Lasers,suppression is achieved for long wavelength QDs. Stacks of QD layers emitting at . are grown which show complete wavelength stability upon overgrowth or annealing at 615.C and are used within a laser device.
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