Titlebook: Defects in Self-Catalysed III-V Nanowires; James A. Gott Book 2022 The Editor(s) (if applicable) and The Author(s), under exclusive licens

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Book 2022 electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. T

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Conclusions and Future Work,dislocations with unfamiliar core structures. Unfamiliar core structures are a result of multiple twinning and inclined twins that interact with defects. The presence of defect structures in NWs can diminish optoelectronic performance and so identifying the exact type of defects can help to guide efforts made in reducing their prevalence.

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Introduction,ause problems is the inability to perfectly combine mismatched material systems. Difficulty in combining different materials comes from lattice mismatch and differences in thermal expansion coefficients. These differences can generate dislocations that prevent devices from operating or make them unr

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Defect Dynamics in Nanowires,t droplet consumption stage of growth. The origin of these defects is from the instability of the growth front between the crystal NW and the liquid Ga droplet as it is consumed, when the Ga flux is switched off [., .].

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Conclusions and Future Work,itions, particularly during catalyst droplet consumption. Defects have been identified through the use of atomic resolution electron microscopy enabled by probe corrected scanning transmission electron microscope (STEM). A large variety of defect types have been observed, including familiar partial

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2190-5053 vealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.978-3-030-94064-5978-3-030-94062-1Series ISSN 2190-5053 Series E-ISSN 2190-5061

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