Titlebook: Crystalline Semiconducting Materials and Devices; Paul N. Butcher,Norman H. March,Mario P. Tosi Book 1986 Springer Science+Business Media

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Impurity Bands,y band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattic

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Special Semiconducting Materials,These include narrow-gap semiconductors (Section 9.1) and magnetic semiconductors (Section 9.2). We then proceed to discuss in Section 9.3 semimagnetic semiconductors, namely semiconductors containing paramagnetic impurities, and in Section 9.4 half-metallic ferromagnets, which are metallic for spin

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The Electronic Structure of Surfaces and Interfaces,riance is broken. This prevents us applying Bloch’s theorem, although Flochet’s theorem enters the picture: solutions forbidden by the infinite crystal can now be allowed . the finite crystal. This introduces . states, surface states, which may be important in some specific cases. Semiconductors are

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Basic Properties in Semiconductor Devices,ant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical

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Preparation and Applications of Amorphous Silicon,decomposition of silane. There were a number of important fundamental developments during the 1970s that established the considerable applied potential of this material and led to the present rapid growth in its use in commercial products. The first of these was the discovery,. as early as 1972, tha

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Daniel Stedman Jones,Ben Jacksonctor interface, which is used to fabricate ohmic contacts and Schottky-barrier diodes. Semiconductor devices are fabricated by combinations of such interfaces. The simple planar transistor consists, for example, of a sequence of metal/p-semiconductor/n-semiconductor/p-semiconductor/metal layers of r

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