Titlebook: Crystalline Semiconducting Materials and Devices; Paul N. Butcher,Norman H. March,Mario P. Tosi Book 1986 Springer Science+Business Media

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Theory of Surface Waves,In this chapter we review the theory of surface waves from a basic standpoint. First the fundamental theory is discussed for varying degrees of complexity (such as crystal anisotropy, interfaces, overlayers, and piezoelectricity) and then we examine some of the experiments that give basic information on the spectrum of surface waves.

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Nancy Cartwright,John Bryan Davisurface of the crystal lattice. Another case is the presence of a foreign atom in the lattice. In both cases, the force constants of the surface atoms or the foreign atom differ from that in the uniform bulk volume of the lattice and the atoms concerned have vibrations out of the perfect crystal. These vibrations are called “localized modes.”

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Daniel Stedman Jones,Ben Jacksons of magnitude,. and is the basis of electronic devices. The technological importance of such properties has given rise to a lot of theoretical and experimental work devoted to the study of impurity states.

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James K. Galbraith,Anthony Heathy band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattices” to the scaling theory in 1979 is surveyed.

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Appreciating Perception and Power,ant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical devices.

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