Titlebook: Crystal Pulling from the Melt; Donald T. J. Hurle Book 1993 Springer-Verlag Berlin Heidelberg 1993 Kristallchemie.Kristallisation.Kristall

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https://doi.org/10.1007/978-3-642-78208-4Kristallchemie; Kristallisation; Kristallphysik; Kristallwachstum; Metall; chemistry; crystal; heat transfe

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978-3-642-78210-7Springer-Verlag Berlin Heidelberg 1993

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Elements of the Process,n as RF induction heating in the figure but various other forms are also in common use) to heat the crucible and charge to above the melting point of the latter. A pull rod with a chuck containing a seed crystal at its lower end is positioned axially above the crucible. This seed crystal is dipped i

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Techniques and Technology,ke bismuth which melts at only 271 °C [76] up to refractory oxides melting at temperatures approaching 2500 °C [77] necessitates a diverse technology. There is no such thing as the universal crystal pulling machine. However, research pullers are usually modular in construction to permit fitment of d

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Heat Transport,rocesses throughout the crystal pulling assembly. We have seen that numerical simulation provides physical insight into the nature of the flows in the melt and their coupling to the thermal boundary conditions but that to deal with questions of stability one must properly take account of the crystal

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System Dynamics and Automatic Diameter Control,ull-rate etc. must be evaluated, i.e. we need to measure the dynamical response of the system to such perturbations. In the language of the electronic control engineer, the transfer function of the process must be determined. Specifically we need to know whether or not the process is stable, i.e. th

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Morphological Stability of a Planar Rotating Interface,ion of a finite melt has already been considered. Additionally it has been shown that a macroscopic radial non-uniformity can result from flow conditions under which the solute boundary layer does not remain embedded within a momentum boundary layer flow characterised by the rotating crystal. Such a