找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1974 Springer Science+Business Media New York 1974 corrosion.crystal.fields.grow

[复制链接]
查看: 52081|回复: 35
发表于 2025-3-21 20:03:19 | 显示全部楼层 |阅读模式
书目名称Crystal Growth
副标题Theory and Technique
编辑C. H. L. Goodman
视频video
图书封面Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1974 Springer Science+Business Media New York 1974 corrosion.crystal.fields.grow
描述In the last decade or so the growth of single crystals has assumed enormous importance for both academic research, and technology (particu­ larly in the field of ‘electronics‘). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right across the board, it turns out that the precise way in which one can grow a particular crystal best varies considerably from material to material. This, of course, is to emphasise the obvious; nonetheless, except in specialised papers in the scientific litera ture , little attempt seems to have been made to deal in any detail with the causes of the difficulties in growing particular kinds of materials and with methods of circumventing them. These specialised papers may be inaccessible, and in any case cannot be, usually, very broad in scope or detailed in treatment simply because of the pressure to keep papers short. And unfortunately few specialised monographs seem to have been produced. These points and others similar emerged repeatedly in discussions w
出版日期Book 1974
关键词corrosion; crystal; fields; growth; metals; optics; paper; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4757-1272-8
isbn_softcover978-1-4757-1274-2
isbn_ebook978-1-4757-1272-8
copyrightSpringer Science+Business Media New York 1974
The information of publication is updating

书目名称Crystal Growth影响因子(影响力)




书目名称Crystal Growth影响因子(影响力)学科排名




书目名称Crystal Growth网络公开度




书目名称Crystal Growth网络公开度学科排名




书目名称Crystal Growth被引频次




书目名称Crystal Growth被引频次学科排名




书目名称Crystal Growth年度引用




书目名称Crystal Growth年度引用学科排名




书目名称Crystal Growth读者反馈




书目名称Crystal Growth读者反馈学科排名




单选投票, 共有 0 人参与投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 22:58:11 | 显示全部楼层
发表于 2025-3-22 03:58:42 | 显示全部楼层
发表于 2025-3-22 06:31:41 | 显示全部楼层
Mechanisms in Vapour Epitaxy of Semiconductors,e latter case, where a gaseous compound or combination of compounds is transported to the vicinity of the solid surface, at which point a chemical reaction occurs which results in formation and deposition of the semiconductor material. Although such a process is more correctly called gas phase epita
发表于 2025-3-22 11:25:53 | 显示全部楼层
发表于 2025-3-22 13:53:09 | 显示全部楼层
发表于 2025-3-22 20:17:15 | 显示全部楼层
发表于 2025-3-22 23:43:25 | 显示全部楼层
发表于 2025-3-23 02:33:46 | 显示全部楼层
发表于 2025-3-23 08:43:13 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-7-5 10:06
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表