Titlebook: Crystal Growth; Principles and Progr A. W. Vere Book 1987 Springer Science+Business Media New York 1987 Phase.defects.epitaxy.material.semi

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https://doi.org/10.1007/BFb0077830 the supersaturation of the gas or liquid phase with respect to the component whose growth is required. Too little supersaturation will result in an unacceptably slow growth rate. At the other extreme of the supersaturation range the rate of condensation exceeds the rate at which the atoms or molecu

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Asen L. Dontchev,Tullio Zolezzice is perfect, this is never the case. The elevated temperature results in the formation of lattice point-defects. As the temperature of the solid increases, so does the amplitude of oscillation of the atoms on the lattice sites. An increasing fraction of these are displaced from their sites to prod

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Asen L. Dontchev,Tullio Zolezziries of origin. For example, in silicon processing, where the product of vapour phase reactions may be polysilicon, epitaxial silicon or amorphous oxides or nitrides, the term CVD (Chemical Vapour Deposition) is applied to all processes, irrespective of the crystalline or amorphous state of the prod

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relatively simple, the complexities of the interactions involved and the individuality of different materials systems and growth processes have ensured that experimentally verifiable predictions from scientific principles have met with only limited success - good crystal growth remains an art. However, recent978-1-4757-9899-9978-1-4757-9897-5

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Book 1987 so that only limited knowledge is required to understand the significance of recent developments. Further assistance for the non-specialist is provided by the summary of abstracts in Part 2, which includes many of the major papers published in the research field. Crystal Growth of Semiconductor Mat

Introduction

Growth from the Liquid Phase,ersity of techniques. It also focuses attention on recent developments in Czochralski (CZ) and Bridgman growth, since these techniques are increasingly important in commercial production of bulk devices and the large-area substrates for epitaxial growth.

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https://doi.org/10.1007/BFb0077830les can be incorporated onto the crystal lattice, leading to breakdown of the single-crystal interface and the onset of non-uniform cellular or dendritic growth (see Chapter 3). The object of good crystal growth is therefore to achieve and maintain a constant level of supersaturation within this range.