找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Cryogenic Operation of Silicon Power Devices; Ranbir Singh,B. Jayant Baliga Book 1998 Springer Science+Business Media New York 1998 Diode.

[复制链接]
楼主: 令人不愉快
发表于 2025-3-27 00:27:21 | 显示全部楼层
发表于 2025-3-27 01:14:24 | 显示全部楼层
e and collector regions determine the Collector-base breakdown voltage of the device and the collector-emitter breakdown voltage is determined by the collector-base breakdown and the current gain of the transistor. While the power bipolar transistors provide a very low voltge drop to the main curren
发表于 2025-3-27 06:39:21 | 显示全部楼层
n-state, the merit of a DMOSFET is judged by the total resistance it offers to the flow of current (on-resistance) and also the rate of change of drain current with the change in gate bias (transconductance). The gate bias at which an inversion layer is formed (threshold voltage) is also an importan
发表于 2025-3-27 11:15:39 | 显示全部楼层
https://doi.org/10.1007/978-981-10-7248-2s called the maximum blocking voltage of the device. Depending on the design of the JFET, this capability may be limited by either the avalanche breakdown of the gate-source junction or the device edge termination. To switch the device from the on-state to the forward blocking state, a negative gate
发表于 2025-3-27 16:10:18 | 显示全部楼层
https://doi.org/10.1007/978-981-10-7248-2responds to a reducing breakover voltage. For a rated gate trigger current, the breakover voltage can be reduced to the built-in voltage of a pn junction and thereafter, the forward characteristics resemble those of a p-i-n diode. To turn the device off from the forward on-state to a forward blockin
发表于 2025-3-27 20:23:40 | 显示全部楼层
发表于 2025-3-27 23:13:33 | 显示全部楼层
Power Bipolar Transistors,e and collector regions determine the Collector-base breakdown voltage of the device and the collector-emitter breakdown voltage is determined by the collector-base breakdown and the current gain of the transistor. While the power bipolar transistors provide a very low voltge drop to the main curren
发表于 2025-3-28 04:12:23 | 显示全部楼层
发表于 2025-3-28 08:07:12 | 显示全部楼层
发表于 2025-3-28 10:26:57 | 显示全部楼层
Thyristors,responds to a reducing breakover voltage. For a rated gate trigger current, the breakover voltage can be reduced to the built-in voltage of a pn junction and thereafter, the forward characteristics resemble those of a p-i-n diode. To turn the device off from the forward on-state to a forward blockin
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-27 10:23
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表