Titlebook: Cryogenic Operation of Silicon Power Devices; Ranbir Singh,B. Jayant Baliga Book 1998 Springer Science+Business Media New York 1998 Diode.

破裂

P-I-N Diode,ut conducts current when a positive voltage is applied to the anode. It consists of an intrinsic layer sandwiched between a pn junction. The intrinsic layer has a very low concentration of (generally) n-type in the order of 10.. It’s thickness ranges from 10μ. to 500μ. depending on the rated breakdo

冒号

Surgeon

oxidize

Conflict

FILTH

Asymmetric Field Controlled Thyristors,ent between the anode and cathode terminals, a small positive bias (<1V) is applied between the gate and cathode terminals. The device then behaves like a forward biased .-i-. diode between the anode and cathode terminals. An AFCT can operate at large current densities with a relatively small forwar

–scent

雪白

注意到

Book 1998tures. In this case, the objective was to ob­ tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of e

Blemish

2196-3185 being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of e978-1-4613-7635-4978-1-4615-5751-7Series ISSN 2196-3185 Series E-ISSN 2196-3193