Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,John L. Moll Book 1986 Springer Science+Business Media New Yo

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书目名称Computer-Aided Design and VLSI Device Development影响因子(影响力)




书目名称Computer-Aided Design and VLSI Device Development影响因子(影响力)学科排名




书目名称Computer-Aided Design and VLSI Device Development网络公开度




书目名称Computer-Aided Design and VLSI Device Development网络公开度学科排名




书目名称Computer-Aided Design and VLSI Device Development被引频次




书目名称Computer-Aided Design and VLSI Device Development被引频次学科排名




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书目名称Computer-Aided Design and VLSI Device Development年度引用学科排名




书目名称Computer-Aided Design and VLSI Device Development读者反馈




书目名称Computer-Aided Design and VLSI Device Development读者反馈学科排名

Enliven

Introduction to Numerical Simulation Systemons. In 1969, Barron [1.1] from Stanford University simulated a MOSFET transistor using a finite-difference method to study the subthreshold conduction and saturation mechanism. Vandorpe [1.2] also simulated and modeled the saturation region with the finite-difference program in 1972. After the self

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Process Simulatione such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t

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Transistor Design for Submicron CMOS Technologynology will first be discussed. Then the concerns for the design of n and p-channel MOSFETs with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.

STANT

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A Study of LDD Device Structure Using 2-D Simulations illustrate the usefulness and necessity of using computer aided design tools in the fabrication of VLSI devices. First, the problem of high electric field in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. F

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MOSFET Scaling by CADDETprocess of scaling. As pointed out in the overview chapter, the long channel relations are not strictly valid for horizontal dimensions that are comparable to the vertical dimensions. In this example, the operating voltage is kept constant. The horizontal dimension, .., and the vertical dimension, .