Titlebook: Compound and Josephson High-Speed Devices; Takahiko Misugi,Akihiro Shibatomi Book 1993 Springer Science+Business Media New York 1993 analo

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https://doi.org/10.1007/978-3-322-88325-4uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s

陈腐思想

https://doi.org/10.1007/978-3-322-88325-4 to new possibilities for ultrahigh-speed large-scale integration (LSI)—verylarge-scale integration (VLSI) applications,. and high-frequency microwave devices applications. The evolution of high-speed low-power HEMT devices is the result of continuous technological progress utilizing the superior el

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Paradigma der Selbstoptimierung,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.

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