| 书目名称 | Compound and Josephson High-Speed Devices | | 编辑 | Takahiko Misugi,Akihiro Shibatomi | | 视频video | | | 丛书名称 | Microdevices | | 图书封面 |  | | 描述 | In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoke | | 出版日期 | Book 1993 | | 关键词 | analog; heterojunction bipolar transistor; integrated circuit; material; semiconductor; transistor | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4757-9774-9 | | isbn_softcover | 978-1-4757-9776-3 | | isbn_ebook | 978-1-4757-9774-9 | | copyright | Springer Science+Business Media New York 1993 |
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发表于 2025-3-21 19:47:09
