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Titlebook: Compound Semiconductor Device Modelling; Christopher M. Snowden,Robert E. Miles Book 1993 Springer-Verlag London Limited 1993 Compound.Dev

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发表于 2025-3-21 19:45:32 | 显示全部楼层 |阅读模式
书目名称Compound Semiconductor Device Modelling
编辑Christopher M. Snowden,Robert E. Miles
视频video
图书封面Titlebook: Compound Semiconductor Device Modelling;  Christopher M. Snowden,Robert E. Miles Book 1993 Springer-Verlag London Limited 1993 Compound.Dev
描述Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the ‘unusual‘ phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low freque
出版日期Book 1993
关键词Compound; Devices; circuit; communication; complexity; diodes; microwave; modelling; physics; semiconductor; s
版次1
doihttps://doi.org/10.1007/978-1-4471-2048-3
isbn_softcover978-1-4471-2050-6
isbn_ebook978-1-4471-2048-3
copyrightSpringer-Verlag London Limited 1993
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Fire Resistance of Protected Slim Floors practice the familiar semiconductor devices such as MESFETs still appear to operate in a an essentially classical way even when their dimensions are very small (e.g. gate lengths < 30 nm). One of the reasons why quantum effects are not always apparent in semiconductors is that changes in potential
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https://doi.org/10.1007/978-1-4471-4872-2e complexity of physical models simply increases to use the resources at hand. Moreover, circuit engineers are familiar with circuit concepts and are likely to choose to work with equivalent circuits if they are sufficiently accurate for design purposes. It appears safe to assume that equivalent cir
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Introduction to Quantum Modelling, practice the familiar semiconductor devices such as MESFETs still appear to operate in a an essentially classical way even when their dimensions are very small (e.g. gate lengths < 30 nm). One of the reasons why quantum effects are not always apparent in semiconductors is that changes in potential
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Equivalent Circuit Modelling,e complexity of physical models simply increases to use the resources at hand. Moreover, circuit engineers are familiar with circuit concepts and are likely to choose to work with equivalent circuits if they are sufficiently accurate for design purposes. It appears safe to assume that equivalent cir
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ient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low freque978-1-4471-2050-6978-1-4471-2048-3
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Fire Resistance of Protected Slim Floorsltaneous nonlinear equations after discretisation has taken place. It is not possible in a single paper to fully describe all the numerical techniques involved in this process, and in this paper we will concentrate on the finite difference approach. Descriptions of the Finite Element method (Selberh
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