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Titlebook: Compound Semiconductor Device Modelling; Christopher M. Snowden,Robert E. Miles Book 1993 Springer-Verlag London Limited 1993 Compound.Dev

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楼主: 气泡
发表于 2025-3-28 15:49:51 | 显示全部楼层
Ultra High-Strength Maraging Steelh based on the drift-diffusion equation. Then we consider IMPATT devices which use phase delays related to avalanche breakdown and carrier drift in a semiconductor diode and discuss additional problems involved in modeling IMPATT devices.
发表于 2025-3-28 20:29:51 | 显示全部楼层
发表于 2025-3-29 02:21:11 | 显示全部楼层
Fire Resistance of Protected Slim Floors to provide not only the I–V characteristics but also the AC and noise performance as well as the non linear behavior of the device. The main particularities of the Q2D approach can be summerized as follows.
发表于 2025-3-29 07:06:07 | 显示全部楼层
https://doi.org/10.1007/978-3-476-03823-4in manufacture and having to develop processes by multiple trials alone adds up to high costs and unacceptable delays. Device modelling offers the opportunity to cut out some process iterations, understand what the critical design areas are and reduce development times and costs.
发表于 2025-3-29 11:13:35 | 显示全部楼层
HBT Modelling,ure which is common to them all is that the emitter has a wider energy gap than the base. Some of the variations will be mentioned later but from the modelling point of view there should not be a problem providing that the relevant parameters of the different regions are known.
发表于 2025-3-29 11:24:05 | 显示全部楼层
发表于 2025-3-29 16:01:13 | 显示全部楼层
Noise Modelling,lume dV located at point . in the device. The fluctuations of the current density at point . induces voltage (or current density) fluctuations at any point . and consequently at the external electrodes. So, the voltage fluctuation at electrode M, resulting from the current density fluctuation at . depends on two factors:
发表于 2025-3-29 22:09:32 | 显示全部楼层
Quasi-Two-Dimensional Models for MESFETs and HEMTs, to provide not only the I–V characteristics but also the AC and noise performance as well as the non linear behavior of the device. The main particularities of the Q2D approach can be summerized as follows.
发表于 2025-3-29 23:56:55 | 显示全部楼层
Industrial Relevance of Device Modelling,in manufacture and having to develop processes by multiple trials alone adds up to high costs and unacceptable delays. Device modelling offers the opportunity to cut out some process iterations, understand what the critical design areas are and reduce development times and costs.
发表于 2025-3-30 07:11:57 | 显示全部楼层
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