找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Compact Transistor Modelling for Circuit Design; Henk C. Graaff,François M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir

[复制链接]
查看: 41479|回复: 46
发表于 2025-3-21 17:27:03 | 显示全部楼层 |阅读模式
书目名称Compact Transistor Modelling for Circuit Design
编辑Henk C. Graaff,François M. Klaassen
视频video
丛书名称Computational Microelectronics
图书封面Titlebook: Compact Transistor Modelling for Circuit Design;  Henk C. Graaff,François M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir
描述During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte­ grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi­ dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This
出版日期Book 1990
关键词SPICE; circuit; circuit design; integrated circuit; model; modeling; simulation; transistor
版次1
doihttps://doi.org/10.1007/978-3-7091-9043-2
isbn_softcover978-3-7091-9045-6
isbn_ebook978-3-7091-9043-2Series ISSN 0179-0307
issn_series 0179-0307
copyrightSpringer-Verlag/Wien 1990
The information of publication is updating

书目名称Compact Transistor Modelling for Circuit Design影响因子(影响力)




书目名称Compact Transistor Modelling for Circuit Design影响因子(影响力)学科排名




书目名称Compact Transistor Modelling for Circuit Design网络公开度




书目名称Compact Transistor Modelling for Circuit Design网络公开度学科排名




书目名称Compact Transistor Modelling for Circuit Design被引频次




书目名称Compact Transistor Modelling for Circuit Design被引频次学科排名




书目名称Compact Transistor Modelling for Circuit Design年度引用




书目名称Compact Transistor Modelling for Circuit Design年度引用学科排名




书目名称Compact Transistor Modelling for Circuit Design读者反馈




书目名称Compact Transistor Modelling for Circuit Design读者反馈学科排名




单选投票, 共有 1 人参与投票
 

0票 0.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

1票 100.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-22 00:12:45 | 显示全部楼层
Book 1990urations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This
发表于 2025-3-22 03:22:20 | 显示全部楼层
0179-0307 o provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This978-3-7091-9045-6978-3-7091-9043-2Series ISSN 0179-0307
发表于 2025-3-22 08:10:57 | 显示全部楼层
Models for the Depletion-Type MOSFET,hich is relatively weakly controlled by the gate electrode. When the channel implant is fairly strong, a hole inversion layer at the surface may occur, which prevents further depletion of the buried channel on a decrease in gate bias. Since this is an unwanted situation for practical application, we
发表于 2025-3-22 10:01:52 | 显示全部楼层
Compact Transistor Modelling for Circuit Design978-3-7091-9043-2Series ISSN 0179-0307
发表于 2025-3-22 16:56:06 | 显示全部楼层
Sozialer Wandel und Kohäsionsforschungions which together define a given model. This description will be limited to vertical . transistors for integrated circuits, including the substrate effects of the parasitic . transistor. Vertical . transistors also exist, but they require no new fundamental additions.
发表于 2025-3-22 18:55:47 | 显示全部楼层
Computational Microelectronicshttp://image.papertrans.cn/c/image/230803.jpg
发表于 2025-3-22 22:02:25 | 显示全部楼层
发表于 2025-3-23 02:32:19 | 显示全部楼层
Das Selbst in der sozialen Kommunikation,The use of lateral . transistors is widespread in linear integrated circuits. They are applied as active load devices, current sources, level shifters etc. [5.1]. Furthermore they are an integral part of integrated injection logic (...) circuits [5.2].
发表于 2025-3-23 07:26:38 | 显示全部楼层
Some Basic Semiconductor Physics,In this chapter we will deal shortly with a number of fundamental concepts of semiconductor physics (distribution functions, doping levels, carrier transport, mobility, etc.). One can also find here a set of formulas that are needed in the description of device phenomena and in the formulation of model equations.
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-1 13:35
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表