Titlebook: Codierungstheorie; Konstruktion und Anw Anton Betten,Harald Fripertinger,Karl-Heinz Zimmer Textbook 1998 Springer-Verlag Berlin Heidelberg

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Antonietta Cosentino,Gaetano della Cortec condition, botulism, to man and animals. The most common forms of human botulism include the classical foodborne botulism due to ingestion of BoNT preformed in food, and infant botulism due to spore germination, growth, and toxin production in the infant’s intestine. Botulism is diagnosed by detec

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Fouling by Aqueous Suspensions of Kaolin and Magnetite: Hydrodynamic and Surface Phenomena Effectsrm a more or less stable deposit. The basic phenomena of particulate fouling include these two processes, together with the simultaneous removal of the deposited particles. Knowledge of the mechanisms involved and also of their mutual interference is essential to the qualitative as well as quantitat

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The Imperative Role of Pervasive Data in Healthcare,ally. The current edge of smart technologies is composed of wireless sensor networks, ad hoc wireless networks and body sensor networks to gather patient data in every moment. The healthcare pervasive data can be utilized anytime and anywhere by the doctors, hospitals, as well as public sector organ

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Telerheumatology and the Department of Veterans Affairs,en outlines the current VA telehealth environment by describing the modalities, technologies, and initiatives that comprise the VA’s telehealth program. It also summarizes the legal and policy underpinnings for VA telehealth. The published VA telerheumatology medical literature is reviewed. In order

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Solutions to Moisture Resistance Degradation During Solder Reflow of Plastic Surface Mount Components,tering different structural weaknesses such as package cracking, delamination, or bond cratering is increased.. The electrical functionality of the package is not threatened immediately on the onset of these physical weaknesses. However, the potential impact of such physical weaknesses on the long-term reliability is a matter of concern.

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SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors, compounds are presented. The possibility of using SiC/Si substrates for deposition of nanocrystals is discussed. A number of theoretical results devoted to the description of the growth mechanisms of these semiconductors are outlined.