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Titlebook: Circuit Design for CMOS VLSI; John P. Uyemura Book 1992 Springer Science+Business Media New York 1992 CMOS.MOSFET.VLSI.analog.circuit.circ

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书目名称Circuit Design for CMOS VLSI
编辑John P. Uyemura
视频video
图书封面Titlebook: Circuit Design for CMOS VLSI;  John P. Uyemura Book 1992 Springer Science+Business Media New York 1992 CMOS.MOSFET.VLSI.analog.circuit.circ
描述During the last decade, CMOS has become increasingly attractive as a basic integrated circuit technology due to its low power (at moderate frequencies), good scalability, and rail-to-rail operation. There are now a variety of CMOS circuit styles, some based on static complementary con­ ductance properties, but others borrowing from earlier NMOS techniques and the advantages of using clocking disciplines for precharge-evaluate se­ quencing. In this comprehensive book, the reader is led systematically through the entire range of CMOS circuit design. Starting with the in­ dividual MOSFET, basic circuit building blocks are described, leading to a broad view of both combinatorial and sequential circuits. Once these circuits are considered in the light of CMOS process technologies, impor­ tant topics in circuit performance are considered, including characteristics of interconnect, gate delay, device sizing, and I/O buffering. Basic circuits are then composed to form macro elements such as multipliers, where the reader acquires a unified view of architectural performance through par­ allelism, and circuit performance through careful attention to circuit-level and layout design optimizatio
出版日期Book 1992
关键词CMOS; MOSFET; VLSI; analog; circuit; circuit design; integrated circuit
版次1
doihttps://doi.org/10.1007/978-1-4615-3620-8
isbn_softcover978-1-4613-6609-6
isbn_ebook978-1-4615-3620-8
copyrightSpringer Science+Business Media New York 1992
The information of publication is updating

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Perspektiven der Regionalisierung,ansistors. Combining technologies in this manner allows for circuits which have the “best of both worlds”: fast switching due to bipolar transistors and low-power/high integration density of CMOS. This evolving field has generated much excitement in recent years.
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