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Titlebook: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses; Fundamental Mechanis Christopher L. Borst,Wil

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书目名称Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses
副标题Fundamental Mechanis
编辑Christopher L. Borst,William N. Gill,Ronald J. Gut
视频video
图书封面Titlebook: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses; Fundamental Mechanis Christopher L. Borst,Wil
描述.As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. ..The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning. .
出版日期Book 2002
关键词development; dielectrics; glass; integrated circuit; interconnect; material; mechanics; metals; model; modeli
版次1
doihttps://doi.org/10.1007/978-1-4615-1165-6
isbn_softcover978-1-4613-5424-6
isbn_ebook978-1-4615-1165-6
copyrightSpringer Science+Business Media New York 2002
The information of publication is updating

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Chemical-Mechanical Planarization (CMP),al and dielectric layers that form the IC interconnect structure [., .]. Nonplanarity is introduced to the wafer surface at the transistor isolation level and increases as the number of metal layers increases. CMP is the process of physically removing material from places of high topography to flatt
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,Low-κ CMP Model Based on Surface Kinetics,physically-based conceptual model for low-κ CMP. The model assumes an altered-layer surface mechanism approach to represent the CMP of BCB, SiLK, and OSG materials and provide a generic understanding of the CMP proce ss for other materials. The model also assumes a desirable low-κ CMP process where
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,Future Directions in IC Interconnects and Related Low-κ Ild Planarization Issues,vent conventional ICs from being interconnect limited. However, as CMOS scaling and lithography advances reduce the minimum feature size below 50 nm, interconnects will again become a performance limiter and probably a manufacturing cost enhancer. Unlike the situation in the late 80s, new materials
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Subunit Interactions in Haemoglobinsity transistors. During these initial two decades of IC development (early 60s to early 80s), the back-end-of-the-line (BEOL) interconnect structure was neither a performance limiter nor a manufacturing cost enhancer. As front-end-of-the-line (FEOL) technology improved with lithography and other ad
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Protein-Protein Interaction Databasesc (ILD). Materials with low-κ values to be used in the near term, such as polymer materials and organic/inorganic hybrids, target the 2.5 – 3.0 dielectric constant range. Subsequent low-κ technology nodes approach the κ ≤ 2.2 range, implying the incorporation of porosity into one of the currently in
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