Titlebook: Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot; Suranjana Sengupta Book 2011 Springe

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书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot影响因子(影响力)

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot影响因子(影响力)学科排名

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot网络公开度

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot网络公开度学科排名

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot被引频次

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot被引频次学科排名

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot年度引用

书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot年度引用学科排名

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书目名称Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot读者反馈学科排名

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Generation of Sub-Picosecond Terahertz Pulses, Fe ion implanted Ga.In.As had a reduced pulse width compared to that obtained from the unimplanted emitters. This reduction in pulse width was attributed to the rapid relaxation of the carriers from the conduction state to the trapped state connected with the Fe ions and vacancies. It was also poss

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Ultrafast Spectroscopy,ple by the pump pulse. This assumption is based on the fact that we conduct our experiments at high excitation densities that favor the quick thermalization of hot carriers via carrier-carrier scattering. The cooling of hot carriers occurs via various phonon scattering mechanism among which scatteri

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Conclusions and Future Outlook,s fabricated on Fe-doped bulk Ga.In.As substrate. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga.In.As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a pulsed THz radiation source with MHz repetiti

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Experimental Techniques, by a Wollaston prism. At this point, the phase modulation of the probe beam is converted to an intensity modulation of the two orthogonal polarizations of the probe beam, which are then steered into a pair of balanced photodiodes. A lock-in amplifier subsequently detects the difference in probe laser light intensities measured by the photodiodes.

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Praktisches Lehrbuch der Tuberkulose regime has been of considerable interest to the scientific community of late. The term terahertz is typically used to indicate the region of electromagnetic spectrum between the frequencies 100 GHz (100 × 10. Hz) and 10 THz (10 × 10. Hz) corresponding to the sub-millimeter wavelength range 3 mm to

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Titlebook: Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Phot; Suranjana Sengupta Book 2011 Springe

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