书目名称 | CMOS RF Circuit Design for Reliability and Variability |
编辑 | Jiann-Shiun Yuan |
视频video | |
概述 | First book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt |
丛书名称 | SpringerBriefs in Applied Sciences and Technology |
图书封面 |  |
描述 | The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations. |
出版日期 | Book 2016 |
关键词 | Device Reliaiblity; Hot Electron Effect; Oxide Breakdown; Process Variation; RF Circuit Reliability |
版次 | 1 |
doi | https://doi.org/10.1007/978-981-10-0884-9 |
isbn_softcover | 978-981-10-0882-5 |
isbn_ebook | 978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318 |
issn_series | 2191-530X |
copyright | The Author(s) 2016 |