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Titlebook: CMOS RF Circuit Design for Reliability and Variability; Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe

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发表于 2025-3-21 18:01:32 | 显示全部楼层 |阅读模式
书目名称CMOS RF Circuit Design for Reliability and Variability
编辑Jiann-Shiun Yuan
视频video
概述First book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt
丛书名称SpringerBriefs in Applied Sciences and Technology
图书封面Titlebook: CMOS RF Circuit Design for Reliability and Variability;  Jiann-Shiun Yuan Book 2016 The Author(s) 2016 Device Reliaiblity.Hot Electron Effe
描述The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.
出版日期Book 2016
关键词Device Reliaiblity; Hot Electron Effect; Oxide Breakdown; Process Variation; RF Circuit Reliability
版次1
doihttps://doi.org/10.1007/978-981-10-0884-9
isbn_softcover978-981-10-0882-5
isbn_ebook978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318
issn_series 2191-530X
copyrightThe Author(s) 2016
The information of publication is updating

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发表于 2025-3-21 21:18:53 | 显示全部楼层
Book 2016 circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical e
发表于 2025-3-22 00:54:07 | 显示全部楼层
发表于 2025-3-22 06:07:45 | 显示全部楼层
发表于 2025-3-22 12:28:02 | 显示全部楼层
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process var
发表于 2025-3-22 15:48:24 | 显示全部楼层
CMOS RF Circuit Design for Reliability and Variability978-981-10-0884-9Series ISSN 2191-530X Series E-ISSN 2191-5318
发表于 2025-3-22 20:49:22 | 显示全部楼层
https://doi.org/10.1007/b137366ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.
发表于 2025-3-22 22:06:37 | 显示全部楼层
Oscillator Design for Variability,ulation is used to probe the physical insight. Analytical equations are dervied to provide the theoretical basis. Monte Carlo simulation results are shown to demonstrate the statistical variation of VCO performance subjected to process variation. Substrate bias technique helps reduce the process variation effect on VCO performance fluctuation.
发表于 2025-3-23 03:06:59 | 显示全部楼层
Jiann-Shiun YuanFirst book to address the effect of device reliability and process variations on the RF circuit performance degradations.Present of all kinds RF circuits in the reliability examination.Includes analyt
发表于 2025-3-23 07:54:37 | 显示全部楼层
SpringerBriefs in Applied Sciences and Technologyhttp://image.papertrans.cn/c/image/220362.jpg
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