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Titlebook: CFN Lectures on Functional Nanostructures; Volume 1 Kurt Busch,Annie Powell,Jörg Weissmüller Book 2005 Springer-Verlag Berlin Heidelberg 20

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楼主: radionuclides
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Shigehiko Hasegawa,Hisao Nakashimaen’s function approach to full counting statistics. To illustrate the concept we consider a number of examples. For generic two-terminal contacts we show how counting statistics elucidates the common (and different) features of transport between normal and superconducting contacts. Finally, we demon
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https://doi.org/10.1007/978-3-319-69611-9 the other hand, is dominated by strong Coulomb interaction. We study a model system in the intersection of both fields, a quantum dot attached to ferromagnetic leads. The combination of spin-polarization in the leads and strong Coulomb interaction in the quantum dot gives rise to an exchange field
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https://doi.org/10.1007/978-3-319-69611-9stem. Focusing on the case of weakly interacting electrons, we investigate thoroughly the dependence of the conductance on the strength and the shape of the double barrier for arbitrary temperature ., down to zero .. We systematically analyze the contributions to renormalized scattering amplitudes f
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Nano-Structures for Optics and Photonicsh scale, but this also requires the recognition of the scaling of conventional behavior. The synthesis pathways further emphasize the importance of reaction kinetics and especially nucleation processes where the nanometer length scale is central to the kinetics. Similarly, the observed phase selecti
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Rosa M. Montereali,Aleksandr P. VoitovichLight propagating through a semiconductor and acting upon mobile carriers can generate a dc electric current, under short-circuit condition, or a voltage, in case of open-circuit samples.
发表于 2025-3-28 05:25:56 | 显示全部楼层
Circular Photo-Galvanic and Spin-Galvanic Effects,Light propagating through a semiconductor and acting upon mobile carriers can generate a dc electric current, under short-circuit condition, or a voltage, in case of open-circuit samples.
发表于 2025-3-28 10:06:48 | 显示全部楼层
Single-Electron Devices,is discrete elementary charge can give rise to peculiar electrostatic effects. With achieving the ability of making small devices on the scale of less than few hundred nanometers, devices based on single-electron charging effects have been proposed and realized in the last 15 years.
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