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Titlebook: Boron and Refractory Borides; Vlado I. Matkovich Book 1977 Springer-Verlag Berlin Heidelberg 1977 Beryllium.alkali metal.boron.carbon.chem

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https://doi.org/10.1007/978-3-662-03956-4ental boron. Although these materials have low purity, they are easily prepared, and their purity can be greatly improved by outgasing in high vacuum and at a temperature near to the melting point of boron.
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Book 1977ed up to the present. Ap­ plication of flakes and films for two-dimensional reinforcement appears attractive, although the high cost of materials and development repre­ sents a considerable barrier. A number of borides have been used to manufacture lightweight protec­ tive armor. In this area relati
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established up to the present. Ap­ plication of flakes and films for two-dimensional reinforcement appears attractive, although the high cost of materials and development repre­ sents a considerable barrier. A number of borides have been used to manufacture lightweight protec­ tive armor. In this area relati978-3-642-66622-3978-3-642-66620-9
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Electron Paramagnetic Resonance (EPR) in Boron Nitride, Boron and Boron Carbideumination gives some insight into the interaction between the spin-carrying centers (Sects. 3 and 4). EPR in boron carbide (Geist, 1964a) is similar to that in boron (Sect. 5); combined measurements of electrical conductivity, EPR intensity and Hall coefficient show some correlation between these pr
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Crystal Chemistry of Higher Boridesographic sites leading to multiple stoichiometries within the same B. framework may also confuse the stoichiometries of these structures. In the light of these potential complications it becomes even more urgent that the crystal chemistry of the higher borides be expressed in a uniform and consisten
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Crystal Chemistry of Boron and of Some Boron-Rich Phases; Preparation of Boron Modificationsental boron. Although these materials have low purity, they are easily prepared, and their purity can be greatly improved by outgasing in high vacuum and at a temperature near to the melting point of boron.
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Introductionoron and refractory borides by the specialists present. The advantages of such a work were immediately apparent. Such diverse applications of borides as in protective armor, nuclear reactors, coatings, reinforcement, etc. can hardly all be presented in sufficient detail by a single author. On the ot
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The Electronic Structures of the Hexaborides and the Diboridesization of the stability of these materials as well as the metal-deficient and mixed-metal phases. Band structure and density-of-states calculations lead to values of electrical conductivities and Hall coefficients for these materials which agree well with experimental data.
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