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Titlebook: Bismuth-Containing Compounds; Handong Li,Zhiming M. Wang Book 2013 Springer Science+Business Media New York 2013 Bismides.Bismuth (V) Cont

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发表于 2025-3-21 18:29:46 | 显示全部楼层 |阅读模式
期刊全称Bismuth-Containing Compounds
影响因子2023Handong Li,Zhiming M. Wang
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发行地址Features comprehensive coverage of novel bismuth-related materials and devices.Covers an emerging materials system with high potential for device applications.Written by leading experts in the corresp
学科分类Springer Series in Materials Science
图书封面Titlebook: Bismuth-Containing Compounds;  Handong Li,Zhiming M. Wang Book 2013 Springer Science+Business Media New York 2013 Bismides.Bismuth (V) Cont
影响因子.Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field.  Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices..
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发表于 2025-3-21 21:46:15 | 显示全部楼层
Dilute Bismuthides on an InP Platform,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping
发表于 2025-3-22 01:48:24 | 显示全部楼层
Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate, by laser reflectometry using a 632.8 nm beam. High-resolution X-ray diffraction, secondary ion mass spectroscopy, photoluminescence, and photoreflectance spectroscopy have been used to characterize the obtained GaAsBi layers. In analyzing the surface morphology, atomic force microscopy and scanning
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Localized States in GaAsBi and GaAs/GaAsBi Heterostructures,ave been proven to be smooth without distinct segregation and stable up to 700 °C. While the interface state density of ~9 × 10. cm. eV. in a GaAs/GaAs.Bi. heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface, presum
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Krankheiten der Verdauungsorgane,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping
发表于 2025-3-23 07:52:21 | 显示全部楼层
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