Titlebook: Bias Temperature Instability for Devices and Circuits; Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De

FAULT

书目名称Bias Temperature Instability for Devices and Circuits影响因子(影响力)




书目名称Bias Temperature Instability for Devices and Circuits影响因子(影响力)学科排名




书目名称Bias Temperature Instability for Devices and Circuits网络公开度




书目名称Bias Temperature Instability for Devices and Circuits网络公开度学科排名




书目名称Bias Temperature Instability for Devices and Circuits被引频次




书目名称Bias Temperature Instability for Devices and Circuits被引频次学科排名




书目名称Bias Temperature Instability for Devices and Circuits年度引用




书目名称Bias Temperature Instability for Devices and Circuits年度引用学科排名




书目名称Bias Temperature Instability for Devices and Circuits读者反馈




书目名称Bias Temperature Instability for Devices and Circuits读者反馈学科排名

temperate

甜食

labile

https://doi.org/10.1007/978-1-349-09706-7 present a microscopic formulation of the reaction–diffusion model based on the reaction–diffusion master equation and solve it using the stochastic simulation algorithm. The calculations are compared to the macroscopic version as well as established experimental data. The degradation predicted by t

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Interim

S. Mirel,S. Pop,E. Onaca,S. Domnita,V. Mirelpendent defects. Although the kinetics of charge capture and defect creation clearly require the presence of charge carriers in the channel, they appear reaction rather than diffusion limited. While a number of peculiar features in these kinetics have been revealed recently, the most striking featur

Mangle

Book 2014as temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

keloid

Tibor GrasserEnables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t

Substitution

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