Titlebook: Band Structure Engineering in Semiconductor Microstructures; R. A. Abram,M. Jaros Book 1989 Springer Science+Business Media New York 1989

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Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlatticesenergy, charge density and electronic structure, the effects of the superlattice parameters on the overall properties (stability, quantum well structure, indirectness of the band gap etc.) are discussed. Geometry optimized total energy calculations indicate that the formation energy of all superlatt

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Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?erface phenomena is critically readdressed. In particular, the conditions under which band offsets do not depend on the interface orientation are examined. State-of-the-art ab-initio pseudopotential calculations are performed for (.).(.). grown in the (001), (110), and (111) directions. Our results

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Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemschnological interest for novel infrared devices. An important parameter, which determines most of the heterostructure properties is the valence-band discontinuity ΔE.. The value of ΔE. is presently disputed in HgTe-CdTe heterojunctions. Although large discrepancies exist between optical or magneto-o

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Exact Envelope Function Equations for Microstructures and the Particle in a Box Modelpic potentials and nonlatticematched structures. A systematic derivation of the particle in a box model is outlined. It is also shown how the basic ideas behind the envelope function method can lead to an intuitive derivation of the particle in a box model without ambiguities concerning boundary con

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A Method for Calculating Electronic Structure of Semiconductor Superlattices: Perturbationge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.

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The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties x = 1/2 and x = 1/4 or 3/4 structures are chalcopyrite and famatinite. Also investigated is the influence of order and strain on the bandstructure of the ordered compounds. Calculated tight-binding band gaps of ordered compounds of the Al.Ga.As family yield results not too different from those for

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AB-Initio Molecular Dynamics Studies of Microclusters and important tool for the theoretical approach to these questions. Here we present some very recent results on small semiconductor aggregates with special reference to calculations of equilibrium shapes and temperature effects. Results of simulations on alkali-metal microclusters are briefly menti

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Observation of Ballistic Holes and injected via tunnelling into 31 nm thick p. GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of

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Quantum Transport Theory of Resonant Tunneling Devicesantum-mechanical wave properties of electrons in their operation. The quantum device which has recieved the most attention recently is the quantum-well resonant-tunneling diode (RTD).. This device shows a negative-resistance characteristic which is quantum-mechanical in origin, and is potentially a