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Titlebook: Atomistic Aspects of Epitaxial Growth; Miroslav Kotrla,Nicolas I. Papanicolaou,Luc T. Wil Book 2002 Springer Science+Business Media Dordre

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发表于 2025-3-21 17:38:44 | 显示全部楼层 |阅读模式
期刊全称Atomistic Aspects of Epitaxial Growth
影响因子2023Miroslav Kotrla,Nicolas I. Papanicolaou,Luc T. Wil
视频video
学科分类NATO Science Series II: Mathematics, Physics and Chemistry
图书封面Titlebook: Atomistic Aspects of Epitaxial Growth;  Miroslav Kotrla,Nicolas I. Papanicolaou,Luc T. Wil Book 2002 Springer Science+Business Media Dordre
影响因子.Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring...The contributions to .Atomistic Aspects of Epitaxial Growth. are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field. .
Pindex Book 2002
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Vibrational and Structural Properties of the Nb (001) Surface With and Without a Nb Adatom by Tight-xed system are in good agreement with the available experimental and theoretical data. From the calculated phonon density of states, we found that the bulk phonon mode around 6.4 THz is altered by the presence of the surface, indicating looser coupling between the surface and the bulk atoms. Further
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Adatoms and Vacancies on A3B(001) Surfaces dynamics. For both materials, we found that the low-energy vibrations of the clean ordered surface and of adatoms are due mainly to the heavier atom and that the surfaces are rumpled. We also found that the behavior of the adatoms is marked by the availability of two equilibrium positions: one over
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Long-Time-Scale Simulations of Al(100) Crystal Growthethod based on harmonic transition state theory. Atoms are deposited using classical dynamics over a time interval of a few picoseconds, but once the system has thermalized, the long time interval in between deposition events, a millisecond, is simulated using an extension of the kinetic Monte Carlo
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Island Nucleation in Metal Thin-Film Growthms do not extend beyond the short range and that deposited atoms remain on top of the substrate, among other things, these equations can be solved to yield a scaling relationship that predicts the density of stable islands as a function of the deposition rate and the diffusivity of an isolated adato
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Capture-Numbers and Island Size-Distributions in Irreversible Homoepitaxial Growth: A Rate Equation lation between the size of an island and the corresponding average capture zone. It is shown that this leads to capture numbers which depend explicitly on the island-size, and excellent agreement with experimental and Monte Carlo results is found for this size-dependence. Consequently, the predictio
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