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Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre

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期刊全称Atomic and Nanometer-Scale Modification of Materials
期刊简称Fundamentals and App
影响因子2023Phaedon Avouris
视频video
学科分类NATO Science Series E:
图书封面Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre
影响因子This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-scale modification and manipulation. theorists investigating the fundamental mech­ anisms of the processes involved in modification, and scientists studying the properties and applications of nanostructures. About seventy scientists from all over the world participated in the conference. It has been more than 30 years since Richard Feynman wrote his prophetic article: ‘‘There is Plenty of Room at the Bottom" (Science and Engineering, 23, 22, 1960). In it he predicted that some day we should be able to store bits of information in structures composed of only 100 atoms or so, and thus be able to write all the information accumulated in all the books in the world in a cube of material one two-hundredths of an inch high. He went on to say, "the prin­ cipl
Pindex Book 1993
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STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,actions and the effects of the electrostatic field produced by a voltage pulse. This process is demonstrated by the controlled removal and redeposition of individual atoms or clusters of Si atoms from Si(111). We then show that due to the elastic coupling of surface atoms, there is a material-depend
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Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM,lectric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electro
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Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M scanning tunneling microscopy (STM) by creating electrically active structures on a nanometer-scale. The intense electron beam provided by the tip of the STM leads to characteristic changes of the layer conductivity (electrically active structures), which is interpreted as to arise from local, elec
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Vibrational Heating and Atom Transfer with the STM,ng. The resulting vibrational distribution is approximately Maxwell-Boltzmann, with a characteristic vibrational temperature. A simple expression is given for this vibrational temperature as a function of the tunneling current. Calculations indicate that vibrational heating by inelastic tunneling pl
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Tip-Induced Modifications of Electronic and Atomic Structure,h can move atoms on the surface. Using the results of self-consistent calculations for the interaction energy we studied the states of a single atom (Al and Xe) between tip and sample. In particular, we investigated the perpendicular and lateral motions of the atom, and the resonant tunneling throug
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