Titlebook: Applied Scanning Probe Methods I; Bharat Bhushan,Harald Fuchs,Sumio Hosaka Book 2004 Springer-Verlag Berlin Heidelberg 2004 AFM.Material S

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AFM Characterization of Semiconductor Line Edge Roughnessn properties of the gate such as leakage current. The International Technology Roadmap for Semiconductors (ITRS) [6] specifies a physical gate length for 2002 of 75 nm and a maximum LER of 3.9 nm. The effect of LER on the function of an electronic gate has been modeled by several studies and these m

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Tip Characterization for Dimensional Nanometrologyanufacturable because performance (speed, data density) improves with miniaturization. Advanced materials, ceramics, and composites increasingly may benefit from the assessment of grain size and other aspects of nanostructure.

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Book 2004ly comprehensive overview of SPM applications, now that industrial applications span topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. After laying the theoretical background of static and dynamic force microscopi

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