Titlebook: Application of High Magnetic Fields in Semiconductor Physics; Proceedings of the I G. Landwehr Conference proceedings 1983 Springer-Verlag

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整洁

浮雕

https://doi.org/10.1007/978-3-540-71281-7A survey of recent experimental results on the transport properties of AlGaAs/GaAs heterojunctions and Si inversion layers is presented.

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顽固

Possible application of the quantized hall resistance to the realization of the electrical units,Precision measurements of the quantized Hall resistance in conjunction with those of other fundamental constants allow other, independent realizations of the SI-unit ohm in addition to the classical one based on a calculable capacitance.

uncertain

Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions,We have studied the temperature dependence of the quantum Hall effect in modulation-doped InGaAs-InP heterojunctions from 4.2 K to 50 mK. The results are briefly discussed in terms of electron localisation.

gruelling

The quantized hall resistance and the Josephson effect,In semiconductor inversion layers with an applied strong magnetic field, the resistance can vanish and the Hall resistance take discrete values h/ie. (i = 1,2,...). We consider the possibility that this might be an occurrence of a macroscopic quantum state.

灯丝

On the two-dimensional wigner localization in high magnetic fields,Based on the recent experiments of the quantized Hall effect in GaAs/GaAlAs, the possible features of the charge density wave state are discussed.

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