Titlebook: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor; Iraj Sadegh Amiri,Mahdiar Ghadiry Book 2018 The A

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Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Teral electric field and length of saturation velocity region (LVSR) of single- and double-gate GNRFETs. Section . proposes a model for ionization coefficient of GNR, and finally, Sect. . presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, so

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Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor, respect to structural parameters in this chapter. In addition, ionization coefficient is calculated with respect to inverse electric field. Finally, the breakdown voltage is calculated for DG- and SG-GNRFETs and the trends and profiles are discussed. Table . shows default values for all the paramet

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Mohammad A. Raza,Matthew L. Mintze nanoscale dimensions, silicon is facing limitations for downscaling such as short-channel effects. As a result, new device concepts such as graphene FETs are being introduced as alternatives to silicon. Since graphene has a zero bandgap, graphene nanoribbon of this material has been introduced to

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https://doi.org/10.1007/978-981-10-6550-7GNRFET; Breakdown Voltage (BV); Length of Velocity Saturation Region (LVSR); Gate Voltages; Semiconducto

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Iraj Sadegh Amiri,Mahdiar GhadiryProvides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs).Discusses an analytical model for

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