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Titlebook: Festkörperprobleme; Reinhard Helbig Book 1994 Springer Fachmedien Wiesbaden 1994 Elektron.Festkörper.Halbleiter.Körper.Spektroskopie.Streu

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Salient Region Detection and Segmentatione been studied by optically detected electron paramagnetic resonance (ODEPR) and optically detected electron nuclear double resonance (ODENDOR) using the magnetic circular dichroism of the optical absorption (MCDA). Its structure models have been proposed: the isolated As antisite defect, the next n
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Markus Hahn,Lars Krüger,Christian Wöhler wavelengths much larger than the typical size of the inhomogeneities) effective medium theories give the desired connection between the component properties and the average ‘effective’ optical behaviour. On the basis of the general Bergman representation for effective dielectric functions we discus
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Sylvain Chevallier,Philippe Tarrouxts..Equally positive statements can be made about future developments in applications. Thus, the computational power of a chip can be boosted by about four orders of magnitude to 10.–10. MIPS on the basis of verified structures. However, this implies that heed be paid to the various recommendations
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On the microscopic structures of three arsenic antisite-related defects in gallium arsenide studiede been studied by optically detected electron paramagnetic resonance (ODEPR) and optically detected electron nuclear double resonance (ODENDOR) using the magnetic circular dichroism of the optical absorption (MCDA). Its structure models have been proposed: the isolated As antisite defect, the next n
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The use of effective medium theories in optical spectroscopy, wavelengths much larger than the typical size of the inhomogeneities) effective medium theories give the desired connection between the component properties and the average ‘effective’ optical behaviour. On the basis of the general Bergman representation for effective dielectric functions we discus
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Zhiye Guo,Shaofeng Ye,Yiju Wang,Chun Linse in the truncated bulk solid. These reconstructed surface geometries have been determined quantitatively for the (110) surfaces of zincblende structure AlP, AlAs, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe and CdTe; the . surfaces of wurtzite structure ZnO and CdSe; and the . surfaces of Cd
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