Titlebook: Advances in Solid State Physics; Bernhard Kramer Book 2002 Springer-Verlag Berlin Heidelberg 2002 Cluster.Epitaxy.Gold.PED.PES.STEM.crysta

使害羞

carotid-bruit

blithe

Björn Stenger,Thomas Woodley,Roberto Cipollae. We observe current steps in the . characteristics of a GaAs-AlAs tunnelling structure with self-assembled InAs quantum dots embedded in the AlAs barrier. The steps originate from resonant tunnelling through individual InAs quantum dots. In a magnetic field the Zeeman splitting of the quantized do

carotenoids

https://doi.org/10.1007/978-3-642-12848-6ced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a .. value of about 1200 K up to 100 K was determined by threshold measu

Affiliation

Andrew Hogue,Michael R. M. Jenkinn on ZnCdSe quantum dots as the active material in a laser diode and their temperature dependece show a transition from 0D-like to 2D-like characteristics limiting their capabiblity for devices. Furthermore, optimisation of electrical contacts due to a post-growth increase of the p-type doping level

Adjourn

Rui Shen,Gaopeng Gou,Irene Cheng,Anup Basued from solid state theoretical concepts. Starting from advances in photonic band structure computations which we apply to structures containing dispersive components, we show how defect structures can be efficiently treated with the help of photonic Wannier functions. In addition, nonlinear PCs may

mutineer

用肘

Andrew Hogue,Michael R. M. Jenkine at least partly attributed to the high bond polarity and to doping limits of the conventional II–VI compounds, such as ZnSe. Beryllium chalcogenides have a considerable potential to overcome these problems. Therefore, binary, ternary or quaternary Be chalcogenide layers or superlattices may be app

兴奋过度

Andrew Hogue,Michael R. M. Jenkinoration of magnetic impurities allows to fabricate semimagnetic semiconductors, which are potentially ferromagnetic at room temperature. Recent results on the MOVPE growth of ZnO will be reported and compared to the status of MBE-ZnO material. The optimization of the MOVPE process on various substra

言行自由

Andrew Hogue,Michael R. M. Jenkins/ (In,Ga)As light emitting diodes (LED) with injection layers of the metals Fe or MnAs. The circular polarization degree of the emitted light reveals a spin polarization for recombining electrons of about 1.5% to 2%. Time-resolved data on spin relaxation times indicate that the actual spin injectio