书目名称 | Zinc Oxide - A Material for Micro- and Optoelectronic Applications |
副标题 | Proceedings of the N |
编辑 | Norbert H. Nickel,Evgenii Terukov |
视频video | |
概述 | Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devices.ZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, h |
丛书名称 | NATO Science Series II: Mathematics, Physics and Chemistry |
图书封面 |  |
描述 | Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al A |
出版日期 | Conference proceedings 2005 |
关键词 | Absorption; Transmission; exciton; microscopy; optical properties; optics; spectroscopy; thin films |
版次 | 1 |
doi | https://doi.org/10.1007/1-4020-3475-X |
isbn_softcover | 978-1-4020-3474-9 |
isbn_ebook | 978-1-4020-3475-6Series ISSN 1568-2609 |
issn_series | 1568-2609 |
copyright | Springer Science+Business Media B.V. 2005 |