Titlebook: Рост Кристаллоь / Rost Kristallov / Growth of Crystals; Volume 12 A. A. Chernov Book 1984 Consultants Bureau, New York 1984 chemistry.cryst

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Crystallization of Manganese Silicates in the Na2O—MnO—SiO2—H2O System with MnO/SiO2 > 1978-3-658-15266-6

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Рост Кристаллоь / Rost Kristallov / Growth of CrystalsVolume 12

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Рост Кристаллоь / Rost Kristallov / Growth of Crystals978-1-4615-7116-2

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Rechnungslegung, Zahlung, Sicherstellungen could be improved by thermal annealing and if this polytype was stable in the temperature range where the 2H to 3C to 6H silicon carbide transformation occurs. Electron diffraction studies were used to observe structural changes and polytype transformations in the .-silicon carbide films.

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Rechnungslegung, Zahlung, Sicherstellungenrizontal temperature gradient, high purity, overpressure capability, and high-vacuum out-gassing are desirable. At temperatures above 2000°C these requirements become formidable tasks for equipment designers.

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Gegenüberstellung mit der Vorausgabeuously, crystals of many high-melting compounds cannot be grown by these methods. This is particularly true for compounds which decompose at high temperatures, melt peritectically, or undergo undesirable phase transitions at high temperatures.