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Titlebook: Wafer-Level Integrated Systems; Implementation Issue Stuart K. Tewksbury Book 1989 Kluwer Academic Publishers 1989 Flip-Flop.Generator.Prog

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Optical Interconnections,usly will remain electrical. The main question is not whether optical communications will be used within a computing machine but instead how deeply such optical techniques will penetrate into the interconnection hierarchy.
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Introduction,wafer scale integration (WSI) has not led to widespread commercial wafer-scale products suggests that the approach is fatally flawed and of little interest. However, it is more appropriate to regard the failures of WSI as failures in competing with an aggressively expanding silicon VLSI technology w
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Introduction,wafer scale integration (WSI) has not led to widespread commercial wafer-scale products suggests that the approach is fatally flawed and of little interest. However, it is more appropriate to regard the failures of WSI as failures in competing with an aggressively expanding silicon VLSI technology w
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Fabrication Defects, (i.e. resist-level patterns) are common to virtually all fabrication processes. Wafer defects are considered in Section 3.1 while lithography defects are discussed in Section 3.2. There are also major defect mechanisms arising during deposition and etching of the thin film dielectric and metalizati
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Fabrication Defects, (i.e. resist-level patterns) are common to virtually all fabrication processes. Wafer defects are considered in Section 3.1 while lithography defects are discussed in Section 3.2. There are also major defect mechanisms arising during deposition and etching of the thin film dielectric and metalizati
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Reliability and Failures,sis and modeling have been developed (e.g. [1,2]). WSI provides reconfiguration or other repair strategies to avoid faulty components, assuming that the faults are known. The emphasis has been on initial yield of functional circuitry, with less attention of achieving tolerance for in-service faults.
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Yield Models and Analysis,effects. Defects during patterning or film depositions can lead to shorts, open lines or defective transistors, as discussed in the previous chapter. Such defect-based faults are considered in this chapter. However, faults also arise through degradation in features, such as electromigration failure
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