加入
发表于 2025-3-26 23:21:38
Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlatticesenergy, charge density and electronic structure, the effects of the superlattice parameters on the overall properties (stability, quantum well structure, indirectness of the band gap etc.) are discussed. Geometry optimized total energy calculations indicate that the formation energy of all superlatt
DEFER
发表于 2025-3-27 02:27:27
Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?erface phenomena is critically readdressed. In particular, the conditions under which band offsets do not depend on the interface orientation are examined. State-of-the-art ab-initio pseudopotential calculations are performed for (.).(.). grown in the (001), (110), and (111) directions. Our results
convert
发表于 2025-3-27 07:57:29
Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemschnological interest for novel infrared devices. An important parameter, which determines most of the heterostructure properties is the valence-band discontinuity ΔE.. The value of ΔE. is presently disputed in HgTe-CdTe heterojunctions. Although large discrepancies exist between optical or magneto-o
Instinctive
发表于 2025-3-27 13:06:39
Exact Envelope Function Equations for Microstructures and the Particle in a Box Modelpic potentials and nonlatticematched structures. A systematic derivation of the particle in a box model is outlined. It is also shown how the basic ideas behind the envelope function method can lead to an intuitive derivation of the particle in a box model without ambiguities concerning boundary con
毗邻
发表于 2025-3-27 15:15:53
A Method for Calculating Electronic Structure of Semiconductor Superlattices: Perturbationge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.
ASTER
发表于 2025-3-27 19:25:13
The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties x = 1/2 and x = 1/4 or 3/4 structures are chalcopyrite and famatinite. Also investigated is the influence of order and strain on the bandstructure of the ordered compounds. Calculated tight-binding band gaps of ordered compounds of the Al.Ga.As family yield results not too different from those for
ensemble
发表于 2025-3-27 22:16:19
AB-Initio Molecular Dynamics Studies of Microclusters and important tool for the theoretical approach to these questions. Here we present some very recent results on small semiconductor aggregates with special reference to calculations of equilibrium shapes and temperature effects. Results of simulations on alkali-metal microclusters are briefly menti
漂浮
发表于 2025-3-28 03:43:51
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心神不宁
发表于 2025-3-28 09:20:18
Observation of Ballistic Holes and injected via tunnelling into 31 nm thick p. GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of
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发表于 2025-3-28 14:12:10
Quantum Transport Theory of Resonant Tunneling Devicesantum-mechanical wave properties of electrons in their operation. The quantum device which has recieved the most attention recently is the quantum-well resonant-tunneling diode (RTD).. This device shows a negative-resistance characteristic which is quantum-mechanical in origin, and is potentially a