Anthrp
发表于 2025-3-25 06:20:08
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咆哮
发表于 2025-3-25 11:29:23
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排斥
发表于 2025-3-25 14:27:24
E. Muschelknautz,G. Hägele,U. Muschelknautz two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposited at the interface. This opens interesting applications from the point of view of the band structure engineering in semiconductor microstructures.
Preamble
发表于 2025-3-25 16:36:46
Normen auf dem Gebiete der Wasserversorgungstributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.
genesis
发表于 2025-3-25 23:48:36
Comments on “Can Band Offsets be Changed Controllably?”dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.
OCTO
发表于 2025-3-26 04:03:37
Electronic Properties of Semiconductor Interfaces: The Control of Interface Barriers two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposited at the interface. This opens interesting applications from the point of view of the band structure engineering in semiconductor microstructures.
palliative-care
发表于 2025-3-26 06:55:40
Observation of Ballistic Holesstributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.
Acupressure
发表于 2025-3-26 12:30:20
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BOOR
发表于 2025-3-26 15:55:01
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Moderate
发表于 2025-3-26 18:00:42
Electronic Properties of Semiconductor Interfaces: The Control of Interface Barrierstheoretical results presented in this communication suggest that the semiconductor heights are basically determined by the intrinsic properties of the two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposite