优雅 发表于 2025-3-28 14:52:06

Hot Electron Effects in Microstructuresrons into thin base regions. We present here a theoretical study, based on a Monte Carlo simulation, of the characteristic energy and momentum losses of hot electrons injected into a doped region, as found for example in the planar doped barrier (PDB) and in the tunneling hot electron transfer ampli

Keratectomy 发表于 2025-3-28 19:53:16

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Subdue 发表于 2025-3-28 23:01:00

Band Structure Engineering in Semiconductor Microstructures978-1-4757-0770-0Series ISSN 0258-1221

摊位 发表于 2025-3-29 05:58:17

https://doi.org/10.1007/978-3-642-61397-5problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as MBE) and MOCVD).

极端的正确性 发表于 2025-3-29 07:47:33

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痛苦一下 发表于 2025-3-29 12:31:40

https://doi.org/10.1007/978-3-642-61397-5ge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.

Servile 发表于 2025-3-29 17:16:21

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有组织 发表于 2025-3-29 23:13:31

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蒸发 发表于 2025-3-30 02:20:21

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graphy 发表于 2025-3-30 07:57:26

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查看完整版本: Titlebook: Band Structure Engineering in Semiconductor Microstructures; R. A. Abram,M. Jaros Book 1989 Springer Science+Business Media New York 1989