Generic-Drug 发表于 2025-3-23 13:31:00
E. Muschelknautz,G. Hägele,U. Muschelknautzthe alloy. Band gaps for a same-cation family of compounds derived from GaAs.Sb. exhibit a large bowing as a function of composition x similar to that reported experimentally for a metastable form of the alloy.fatty-streak 发表于 2025-3-23 17:13:52
Leitungs- und Verwaltungskompetenzenfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.狗窝 发表于 2025-3-23 18:56:38
http://reply.papertrans.cn/19/1806/180550/180550_13.png子女 发表于 2025-3-24 01:18:17
E. Muschelknautz,G. Hägele,U. Muschelknautziodicity, lattice mismatch, and polarity of sublattices in the formation energy vary depending upon the type of the superlattice. The electronic structure is found to depend strongly on the sublattice periodicity when it is small.itinerary 发表于 2025-3-24 04:31:24
http://reply.papertrans.cn/19/1806/180550/180550_15.png滋养 发表于 2025-3-24 09:28:05
Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemsptical and x-ray photoemission experiments it turns out that ΔE. can be classified into two groups: small ΔE. (0–120 meV) and large ΔE. (300–400 meV). This paper presents an overview of these experimental data.确保 发表于 2025-3-24 14:27:08
http://reply.papertrans.cn/19/1806/180550/180550_17.png神秘 发表于 2025-3-24 18:42:41
Hot Electron Effects in Microstructuresfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.内向者 发表于 2025-3-24 18:59:45
http://reply.papertrans.cn/19/1806/180550/180550_19.png委派 发表于 2025-3-25 02:20:53
Book 1989Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has fac