Titlebook: Vertical-Cavity Surface-Emitting Laser Devices; Herbert E. Li,Kenichi Iga Book 2003 Springer-Verlag Berlin Heidelberg 2003 Apertur.Distrib

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Physics of the Gain Medium in Vertical-Cavity Surface-Emitting Semiconductor Lasers,ed from laboratory curiosities, to prototype devices exhibiting performance and manufacturability that are attractive for many optoelectronic applications. Furthermore, the unique characteristics of a VCSEL is conducive to studies of fundamental aspects of the interaction between light and a semicon

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Three-Dimensional Simulation of Vertical-Cavity Surface-Emitting Semiconductor Lasers,nventional edge-emitting lasers (EELs). A typical list of those features would include inherent dynamic single-longitudinal-mode operation owing to the short optical cavity length, presence of high-reflectivity mirrors necessary to compensate for the short length of the active medium, low-divergence

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Modeling the Dynamics of VCSELs,stems because of their potential capability for stable single-mode operation, ultra-high intrinsic relaxation oscillation frequency, ultra-low threshold current condition and efficient coupling into optical fibers. The ultra-high intrinsic relaxation oscillation frequency of VCSELs is the result of

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Cavity and Mirror Design for Vertical-Cavity Surface-Emitting Lasers,hey are aimed at a) minimizing the laser threshold current, b) maximizing the wall-plug efficiency, c) maintaining a single-mode operation over a wide range of bias currents, d) minimizing the temperature sensitivity, and e) ensuring that the relaxation oscillation frequency remains high. In practic