| 书目名称 | Variation-Aware Advanced CMOS Devices and SRAM |
| 编辑 | Changhwan Shin |
| 视频video | |
| 概述 | Offers an insightful overview of the key techniques in variation-immune CMOS device designs.Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random va |
| 丛书名称 | Springer Series in Advanced Microelectronics |
| 图书封面 |  |
| 描述 | .This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM...The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device |
| 出版日期 | Book 2016 |
| 关键词 | CMOS Device Designs; Integrated circuits; Line Edge Roughness; MOSFET; Process-Induced Random Variation; |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-94-017-7597-7 |
| isbn_softcover | 978-94-024-1390-8 |
| isbn_ebook | 978-94-017-7597-7Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
| issn_series | 1437-0387 |
| copyright | Springer Science+Business Media Dordrecht 2016 |
发表于 2025-3-21 18:46:09
