Titlebook: Vapor Crystal Growth and Characterization; ZnSe and Related II– Ching-Hua Su Book 2020 Springer Nature Switzerland AG 2020 Physical Vapor T

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Book 2020sical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Fur

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Introduction,s. The continued improvement in overall device performance requires bulk crystals with less structural defects such as twins, lattice strain, dislocations, grain boundaries and second phase inclusions. The electrical and consequently the optical properties of the materials depend on the deviation fr

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Fundamentals of Physical Vapor Transport Process, between these species. After the establishment of the best-fit parameters, the complete phase diagram and thermodynamic properties of the system can be generated for the applications of crystal growth experiments. The thermodynamic analysis has been applied to binary, ternary and quaternary systems

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Vapor Transport Rate (Mass Flux) Measurements and Heat Treatments, pressures and transport rates. The mass flux in the ternary systems of ZnSe.Te., ZnSe.S. and Zn.Cd.Se have been calculated from the one-dimensional diffusion model for the ternary systems and experimentally measured on the systems of ZnSe.Te. and ZnSe.S..

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Characterizations on Crystalline Structures and Defect Distributions,examined by Secondary Ion Mass Spectroscopy (SIMS) and Glow Discharge Mass Spectroscopy (GDMS) whereas the distributions of impurities and native point defects were mapped by photoluminescence (PL). The compositional distributions in the grown crystals of ternary ZnSeTe crystals were studied by wave

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Measurements on Thermal and Electrical Properties and Characterizations on Annealed Samples,tory, i.e., the “clear” and the “dark”, even though the growth parameters were kept essentially the same. To investigate the cause of this optical difference, the studies were emphasized on the stoichiometry changes of the crystals through the formation of point defects and their complexes. In the s

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