| 书目名称 | Ultra-Low Voltage Nano-Scale Memories |
| 编辑 | Kiyoo Itoh,Masashi Horiguchi,Hitoshi Tanaka |
| 视频video | |
| 概述 | Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits.Presents the essential differenc |
| 丛书名称 | Integrated Circuits and Systems |
| 图书封面 |  |
| 描述 | ..Ultra-Low Voltage Nano-Scale Memories. provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.. |
| 出版日期 | Book 2007 |
| 关键词 | DRAM; Generator; LSI; SRAM; Signal; analog; circuit; circuit design; high voltage; integrated circuit; logic; m |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-0-387-68853-4 |
| isbn_softcover | 978-1-4419-4124-4 |
| isbn_ebook | 978-0-387-68853-4Series ISSN 1558-9412 Series E-ISSN 1558-9420 |
| issn_series | 1558-9412 |
| copyright | Springer-Verlag US 2007 |
发表于 2025-3-21 18:25:03
