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Titlebook: The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits; The semi-empirical a Paul Jespers Book 20101st edition Springer-

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书目名称The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits
副标题The semi-empirical a
编辑Paul Jespers
视频video
概述Sizing methodology for analog CMOS circuits.Low-voltage low-power circuits.Large signal compact modelling of submicron transistors.Parameter acquisition
丛书名称Analog Circuits and Signal Processing
图书封面Titlebook: The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits; The semi-empirical a Paul Jespers Book 20101st edition Springer-
描述.In "The g.m./I.D. Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits", we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model when its parameters are supposed to be bias dependent. The model-driven and semi-empirical methods are compared considering the Intrinsic Gain Stage and a few more complex circuits. A series of MATLAB files found on extras-springer.com  allow redoing the tests..
出版日期Book 20101st edition
关键词CMOS; ROM; Transistor; integrated circuit; large signal compact models; low-voltage, low-power analog CMO
版次1
doihttps://doi.org/10.1007/978-0-387-47101-3
isbn_softcover978-1-4614-2505-2
isbn_ebook978-0-387-47101-3Series ISSN 1872-082X Series E-ISSN 2197-1854
issn_series 1872-082X
copyrightSpringer-Verlag US 2010
The information of publication is updating

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